Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5
- RS庫存編號:
- 234-7155
- 製造零件編號:
- RJK0651DPB-00#J5
- 製造商:
- Renesas Electronics
6640 現貨庫存，可於3工作日發貨。
已增加
單價 个（每托盘 5 ）
HK$14.55
| 單位 | Per unit | Per Pack* |
| 5 - 45 | HK$14.55 | HK$72.75 |
| 50 - 95 | HK$14.186 | HK$70.93 |
| 100 - 245 | HK$13.832 | HK$69.16 |
| 250 - 995 | HK$13.486 | HK$67.43 |
| 1000 + | HK$13.148 | HK$65.74 |
| * 參考價格 | ||
- RS庫存編號:
- 234-7155
- 製造零件編號:
- RJK0651DPB-00#J5
- 製造商:
- Renesas Electronics
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.014 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Number of Elements per Chip | 1 |
| Transistor Material | Silicon |