Renesas Electronics Type N-Channel MOSFET, 40 A, 60 V Enhancement, 4-Pin SOT-669 RJK0656DPB-00#J5

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包裝方式:
RS庫存編號:
234-7157P
製造零件編號:
RJK0656DPB-00#J5
製造商:
Renesas Electronics
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品牌

Renesas Electronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-669

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

45W

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free