STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

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HK$46,599.00

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RS庫存編號:
234-8895
製造零件編號:
STH200N10WF7-2
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.

Best-in-class SOA capability

High current surge capability

Extremely low on-resistance

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