Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON
- RS庫存編號:
- 249-8628
- 製造零件編號:
- IAUC41N06S5N102ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
HK$14,575.00
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 5,000 件從 2026年3月30日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | HK$2.915 | HK$14,575.00 |
| 10000 - 10000 | HK$2.857 | HK$14,285.00 |
| 15000 + | HK$2.80 | HK$14,000.00 |
* 參考價格
- RS庫存編號:
- 249-8628
- 製造零件編號:
- IAUC41N06S5N102ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 60V, N-Ch, 10.2 mohm, Automotive MOSFET with OptiMOS 5 technology for 60V MOSFETs in the industry standard S3O8 5 mm x 6 mm small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.
OptiMOS power MOSFET for automotive applications
N-channel, Enhancement mode, Normal Level
Extended qualification beyond AEC-Q101
Enhanced electrical testing
Robust design
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100 percent Avalanche tested
相关链接
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC41N06S5N102ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5N017ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5L032ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N010ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L009ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N013ATMA1