N-Channel MOSFET, 29 A, 55 V, 3-Pin TO-220AB Infineon IRFZ34NPBF
- RS庫存編號:
- 540-9761
- Distrelec 貨號:
- 303-41-382
- 製造零件編號:
- IRFZ34NPBF
- 製造商:
- Infineon
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Price 个**
HK$6.50
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單位 | 每單位 |
|---|---|
| 1 - 12 | HK$6.50 |
| 13 - 24 | HK$6.39 |
| 25 + | HK$6.28 |
** 參考價格
- RS庫存編號:
- 540-9761
- Distrelec 貨號:
- 303-41-382
- 製造零件編號:
- IRFZ34NPBF
- 製造商:
- Infineon
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 29A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRFZ34NPBF
This MOSFET is tailored for advanced electronic applications, particularly where high efficiency and dependability are essential. Its N-channel configuration facilitates efficient switching and modulation of electrical currents in power systems. With a maximum drain-source voltage of 55V and a continuous drain current of 29A, this component is crucial for high-performance designs in the automation and electrical sectors.
Features & Benefits
• Ultra-low on-resistance for minimal power loss
• Maximum power dissipation of 68W for robust functionality
• High-temperature tolerance of up to 175°C ensures long-term performance
• Compatible with through-hole mounting for easy integration
• Dynamic dv/dt rating allows for fast switching applications
• Enhancement mode transistor improves device efficiency
• Maximum power dissipation of 68W for robust functionality
• High-temperature tolerance of up to 175°C ensures long-term performance
• Compatible with through-hole mounting for easy integration
• Dynamic dv/dt rating allows for fast switching applications
• Enhancement mode transistor improves device efficiency
Applications
• Utilised in power supply designs for effective energy management
• Employed in motor control for accurate speed regulation
• Suitable for discrete switching in consumer electronics
• Applied in industrial automation to enhance system dependability
• Appropriate for automotive requiring high power handling
• Employed in motor control for accurate speed regulation
• Suitable for discrete switching in consumer electronics
• Applied in industrial automation to enhance system dependability
• Appropriate for automotive requiring high power handling
What is the maximum continuous drain current at 100°C?
At 100°C, the continuous drain current is rated at 20A, ensuring dependability in high-temperature conditions.
How does the low on-resistance benefit circuit efficiency?
A low RDS(on) decreases power losses during operation, which increases overall circuit efficiency and minimises heat generation.
Can it be used for parallel configurations?
Yes, the design accommodates easy paralleling, enhancing current handling for high-power applications.
What are the implications of the maximum gate-source voltage?
The maximum gate-source voltage of ±20V ensures safe operation and protects against damage during standard switching activities.
What is the impact of temperature on performance?
With an operating temperature range from -55°C to +175°C, it maintains operational integrity in extreme conditions, making it suitable for a variety of applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 29 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 68 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Width | 4.69mm |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10.54mm |
| Number of Elements per Chip | 1 |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.6V |