N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB Infineon IRLZ44NPBF
- RS庫存編號:
- 541-0086
- Distrelec 貨號:
- 303-41-412
- 製造零件編號:
- IRLZ44NPBF
- 製造商:
- Infineon
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小計（1 件）**
HK$8.30
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單位 | 每單位 |
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| 1 - 12 | HK$8.30 |
| 13 - 24 | HK$8.10 |
| 25 + | HK$8.00 |
** 參考價格
- RS庫存編號:
- 541-0086
- Distrelec 貨號:
- 303-41-412
- 製造零件編號:
- IRLZ44NPBF
- 製造商:
- Infineon
Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF
This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.
Features & Benefits
• Supports continuous drain current up to 47A for effective power delivery
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency
Applications
• Power supply circuits requiring efficient load switching
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation
What is the operating temperature range of the device?
The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.
How should this be mounted for optimal performance?
It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.
Can it be used with other power management components?
Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.
What are the implications of the gate threshold voltage range?
A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 47 A |
| Maximum Drain Source Voltage | 55 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 22 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10.54mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 48 nC @ 5 V |
| Width | 4.69mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.3V |
| Height | 8.77mm |
