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MOSFETs
N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF
RS庫存編號:
541-1124
製造零件編號:
IRFBE30PBF
製造商:
Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
164 現貨庫存,可於3工作日發貨。
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HK$16.31
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HK$16.31
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HK$15.91
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HK$15.67
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RS庫存編號:
541-1124
製造零件編號:
IRFBE30PBF
製造商:
Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet
ESD Control Selection Guide V1
Group 6
3D
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相容
符合聲明
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
78 nC @ 10 V
Length
10.41mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm