N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS庫存編號:: 541-1124P
製造零件編號:: IRFBE30PBF
製造商:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

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單價个 (以毎帶裝提供)

HK$15.91

單位	每單位
13 - 24	HK$15.91
25 +	HK$15.67

RS庫存編號:: 541-1124P
製造零件編號:: IRFBE30PBF
製造商:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.41mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	78 nC @ 10 V
Width	4.7mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor