N-Channel MOSFET, 18 A, 55 V, 3-Pin TO-220AB Infineon IRLZ24NPBF
- RS庫存編號:
- 541-1231
- 製造零件編號:
- IRLZ24NPBF
- 製造商:
- Infineon
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Price 个**
HK$6.40
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單位 | 每單位 |
---|---|
1 - 12 | HK$6.40 |
13 - 24 | HK$6.25 |
25 + | HK$6.15 |
** 參考價格
- RS庫存編號:
- 541-1231
- 製造零件編號:
- IRLZ24NPBF
- 製造商:
- Infineon
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF
This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.
Features & Benefits
• Supports a maximum continuous drain current of 18A for high performance
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions
Applications
• Utilised for power management in industrial automation systems
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance
What are the recommended gate-source voltages for proper operation?
The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.
Can this component be used in high-temperature environments?
Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.
How does the low Rds(on) impact energy consumption?
A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.
What considerations should be made during installation?
Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.
Is this component compatible with standard TO-220AB packages?
Yes, its design conforms to the TO-220AB standard, facilitating easy integration into existing systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Voltage | 55 V |
Package Type | TO-220AB |
Series | HEXFET |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 60 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 45 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 15 nC @ 5 V |
Number of Elements per Chip | 1 |
Length | 10.54mm |
Maximum Operating Temperature | +175 °C |
Width | 4.69mm |
Forward Diode Voltage | 1.3V |
Minimum Operating Temperature | -55 °C |
Height | 8.77mm |