N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

RS庫存編號:: 710-3323P
製造零件編號:: SI4162DY-T1-GE3
製造商:: Vishay

N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

單價个 (以每卷裝提供) 連續帶的數量低於 150

HK$5.786

當前暫無庫存，可於2025/2/3發貨，3 工作日送達。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

訂單金額滿 HK$850.00 即可享受免費送貨服務

單位	每單位
5 +	HK$5.786

RS庫存編號:: 710-3323P
製造零件編號:: SI4162DY-T1-GE3
製造商:: Vishay

Trans MOSFET N-CH 30V 13.6A N
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	13.6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4mm
Transistor Material	Si
Length	5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	20 nC @ 10 V, 8.8 nC @ 4.5 V
Height	1.5mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

訂單金額滿 HK$850.00 即可享受 免費 送貨服務

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

訂單金額滿 HK$850.00 即可享受免費送貨服務