P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3
- RS庫存編號:
- 710-3339P
- 製造零件編號:
- SI4435DDY-T1-GE3
- 製造商:
- Vishay
可供預購。
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$4.523
單位 | 每單位 |
|---|---|
| 630 - 1240 | HK$4.523 |
| 1250 + | HK$4.453 |
- RS庫存編號:
- 710-3339P
- 製造零件編號:
- SI4435DDY-T1-GE3
- 製造商:
- Vishay
法例與合規
產品詳細資訊
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8.1 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4mm |
| Transistor Material | Si |
| Length | 5mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V, 32 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |