Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

RS庫存編號:: 710-3345P
製造零件編號:: SI4559ADY-T1-GE3
製造商:: Vishay

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

可享批量折扣

單價个 (以每卷裝提供) 連續帶的數量低於 150

HK$8.72

4030 現貨庫存，可於3工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

訂單金額滿 HK$850.00 即可享受免費送貨服務

單位	每單位
625 +	HK$8.50

RS庫存編號:: 710-3345P
製造零件編號:: SI4559ADY-T1-GE3
製造商:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3.9 A, 5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ, 150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W, 3.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Typical Gate Charge @ Vgs	13 nC @ 30 V, 14.5 nC @ 30 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

訂單金額滿 HK$850.00 即可享受 免費 送貨服務

Dual N/P-Channel MOSFET, Vishay Semiconductor

訂單金額滿 HK$850.00 即可享受免費送貨服務