BSP300H6327XUSA1 N-Channel MOSFET, 190 mA, 800 V SIPMOS, 3+Tab-Pin SOT-223 Infineon

  • RS庫存編號 752-8211
  • 製造零件編號 BSP300H6327XUSA1
  • 製造商 Infineon
產品概覽和技術數據資料表
法例與合規
相容
產品詳細資訊

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 190 mA
Maximum Drain Source Voltage 800 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 20 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 1.8 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Length 6.5mm
Minimum Operating Temperature -55 °C
Width 3.5mm
Series SIPMOS
Height 1.6mm
Maximum Operating Temperature +150 °C
85 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 9.76
(不含稅)
單位
Per unit
Per Pack*
5 - 20
HK$9.76
HK$48.80
25 - 95
HK$8.696
HK$43.48
100 - 245
HK$8.22
HK$41.10
250 - 495
HK$8.14
HK$40.70
500 +
HK$8.058
HK$40.29
* 參考價格
包裝方式: