N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

RS庫存編號:: 754-5434P
製造零件編號:: IPB107N20N3GATMA1
製造商:: Infineon

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

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可享批量折扣

單價个 (以每卷裝提供)**. 連續帶的數量低於 150

HK$59.44

796 現貨庫存，可於3工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

訂單金額滿 HK$850.00 即可享受免費送貨服務

單位	每單位
250 - 499	HK$57.95
500 +	HK$57.06

** 參考價格

RS庫存編號:: 754-5434P
製造零件編號:: IPB107N20N3GATMA1
製造商:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Width	9.45mm
Length	10.31mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

訂單金額滿 HK$850.00 即可享受 免費 送貨服務

Infineon OptiMOS™3 Power MOSFETs, 100V and over

訂單金額滿 HK$850.00 即可享受免費送貨服務