服務
Ideas and Advice
折扣優惠
包裹追蹤
登入
主目錄
製造零件編號
最近搜索
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
Semiconductors
Discrete Semiconductors
MOSFETs
N-Channel MOSFET, 30 mA, 12.5 V Depletion, 4-Pin SMQ Toshiba 3SK291(TE85L,F)
RS庫存編號:
756-0385
製造零件編號:
3SK291(TE85L,F)
製造商:
Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
230 現貨庫存,可於3工作日發貨。
Add to Basket
單位
添加到購物車
即時庫存查詢
添加到收藏夾
單價 个(每托盘 10 )
HK$2.296
單位
Per unit
Per Pack*
10 - 40
HK$2.296
HK$22.96
50 - 90
HK$2.228
HK$22.28
100 - 240
HK$2.159
HK$21.59
250 - 490
HK$2.113
HK$21.13
500 +
HK$2.067
HK$20.67
* 參考價格
RS庫存編號:
756-0385
製造零件編號:
3SK291(TE85L,F)
製造商:
Toshiba
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
3SK291,Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
JP
RF MOSFET Transistors, Toshiba
MOSFET Transistors, Toshiba
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
12.5 V
Package Type
SMQ
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.5mm
Length
2.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Transistor Material
Si
Height
1.1mm
Typical Power Gain
22.5 dB