N-Channel MOSFET, 15 A, 710 V, 3-Pin DPAK STMicroelectronics STD18N65M5
- RS庫存編號:
- 783-3030
- 製造零件編號:
- STD18N65M5
- 製造商:
- STMicroelectronics
當前暫無庫存，可於2024/5/15發貨，3 工作日送達。
已增加
單價 个（每托盘 5 ）
HK$23.028
| 單位 | Per unit | Per Pack* |
| 5 - 620 | HK$23.028 | HK$115.14 |
| 625 - 1245 | HK$22.452 | HK$112.26 |
| 1250 + | HK$22.106 | HK$110.53 |
| * 參考價格 | ||
- RS庫存編號:
- 783-3030
- 製造零件編號:
- STD18N65M5
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Voltage | 710 V |
| Series | MDmesh M5 |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 220 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 6.2mm |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Length | 6.6mm |
| Maximum Operating Temperature | +150 °C |
| Height | 2.4mm |