Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
- RS庫存編號:
- 787-8995
- 製造零件編號:
- SI9945BDY-T1-GE3
- 製造商:
- Vishay
10 將在 1 工作日發貨 （本地庫存）
60 在4 工作日內發貨 (海外庫存)
單價 个（每托盘 10 ）
HK$5.856
單位 | 每單位 | 每包* |
|---|---|---|
| 10 + | HK$5.856 | HK$58.56 |
* 參考價格
- RS庫存編號:
- 787-8995
- 製造零件編號:
- SI9945BDY-T1-GE3
- 製造商:
- Vishay
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產品詳細資訊
Dual N-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.3 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 72 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 3.1 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Length | 5mm |
| Transistor Material | Si |
| Width | 4mm |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |