Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

RS庫存編號:: 787-9052P
製造零件編號:: SI4925DDY-T1-GE3
製造商:: Vishay

Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

7170 現貨庫存，可於3工作日發貨。

單價个 (以每卷裝提供) 連續帶的數量低於 150

HK$29.70

單位	每單位
1 +	HK$29.70

RS庫存編號:: 787-9052P
製造零件編號:: SI4925DDY-T1-GE3
製造商:: Vishay

Si4925DDY, Dual P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	41 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	5 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Length	5mm
Width	4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	32 nC @ 10 V
Maximum Operating Temperature	+150 °C
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor