N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

RS庫存編號:: 787-9399
製造零件編號:: SIS892ADN-T1-GE3
製造商:: Vishay

產品概覽和技術數據資料表 (2)

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

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單價个（每托盘 10 ）

HK$6.98

單位	每單位	每包*
10 - 740	HK$6.98	HK$69.80
750 - 1490	HK$6.806	HK$68.06
1500 +	HK$6.701	HK$67.01

* 參考價格

RS庫存編號:: 787-9399
製造零件編號:: SIS892ADN-T1-GE3
製造商:: Vishay

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	12.8 nC @ 10 V
Width	3.4mm
Transistor Material	Si
Length	3.4mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

產品概覽和技術數據資料表 (2)

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor