N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3
- RS庫存編號:
- 787-9399P
- 製造零件編號:
- SIS892ADN-T1-GE3
- 製造商:
- Vishay
可供預購。
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$6.806
單位 | 每單位 |
|---|---|
| 750 - 1490 | HK$6.806 |
| 1500 + | HK$6.701 |
- RS庫存編號:
- 787-9399P
- 製造零件編號:
- SIS892ADN-T1-GE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PowerPAK 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 47 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 52 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 3.4mm |
| Typical Gate Charge @ Vgs | 12.8 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3.4mm |
| Height | 1.12mm |
| Minimum Operating Temperature | -55 °C |