N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS庫存編號:: 802-4357P
製造零件編號:: IXFB210N30P3
製造商:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

可享批量折扣

單價个 (以每管裝提供)**

HK$222.10

71 現貨庫存，可於3工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

訂單金額滿 HK$850.00 即可享受免費送貨服務

單位	每單位
7 - 12	HK$216.60
13 +	HK$213.20

** 參考價格

RS庫存編號:: 802-4357P
製造零件編號:: IXFB210N30P3
製造商:: IXYS

IXFB210N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	PLUS264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.31mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	20.29mm
Typical Gate Charge @ Vgs	268 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	26.59mm

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

訂單金額滿 HK$850.00 即可享受 免費 送貨服務

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

訂單金額滿 HK$850.00 即可享受免費送貨服務