onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

RS庫存編號:: 806-3504
製造零件編號:: FDMC8030
製造商:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

HK$51.20

訂單超過 HK$250.00 免費送貨

最後的 RS 庫存

355 件準備從其他地點送貨
最終 1,645 件從 2026年4月07日起發貨

單位	每單位	每包*
5 - 745	HK$10.24	HK$51.20
750 - 1495	HK$10.00	HK$50.00
1500 +	HK$9.82	HK$49.10

* 參考價格

RS庫存編號:: 806-3504
製造零件編號:: FDMC8030
製造商:: onsemi

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	Dual N-Channel Power Trench MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	40V
	Series	PowerTrench
	Package Type	Power 33
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.9W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Standards/Approvals	Lead-Free and RoHS
	Length	3mm
	Height	0.75mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type Dual N-Channel Power Trench MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 40V
	Series PowerTrench
	Package Type Power 33
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.9W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Standards/Approvals Lead-Free and RoHS
	Length 3mm
	Height 0.75mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

訂單超過 HK$250.00 免費送貨

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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