Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology • High Drain-Source breakdown voltages - up to 1200V • Multiple devices are easy to parallel and simple to drive • High speed switching with low on-resistance • Latch-up resistant operation
