Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

RS庫存編號:: 812-3108P
製造零件編號:: SI1967DH-T1-GE3
製造商:: Vishay

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

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單價个 (以每卷裝提供) 連續帶的數量低於 150

HK$2.471

單位	每單位
750 - 1450	HK$2.471
1500 +	HK$2.426

RS庫存編號:: 812-3108P
製造零件編號:: SI1967DH-T1-GE3
製造商:: Vishay

Si1967DH, Dual P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	790 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Width	1.35mm
Typical Gate Charge @ Vgs	2.6 nC @ 8 V
Length	2.2mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1mm

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor