P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 Vishay SI2323DDS-T1-GE3
- RS庫存編號:
- 812-3110P
- 製造零件編號:
- SI2323DDS-T1-GE3
- 製造商:
- Vishay
可供預購。
單價 个 (以每卷裝提供) 連續帶的數量低於 150
HK$3.607
單位 | 每單位 |
|---|---|
| 760 - 1480 | HK$3.607 |
| 1500 + | HK$3.54 |
- RS庫存編號:
- 812-3110P
- 製造零件編號:
- SI2323DDS-T1-GE3
- 製造商:
- Vishay
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 24 nC @ 8 V |
| Length | 3.04mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |