Dual N-Channel MOSFET, 3.6 A, 80 V, 8-Pin SOIC Infineon IRF7380TRPBF
- RS庫存編號:
- 826-8904P
- 製造零件編號:
- IRF7380TRPBF
- 製造商:
- Infineon
可享批量折扣
Price 个 (以每卷裝提供)**. 連續帶的數量低於 150
HK$5.48
3860 現貨庫存，可於3工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 |
|---|---|
| 1000 - 1980 | HK$5.34 |
| 2000 + | HK$5.26 |
** 參考價格
- RS庫存編號:
- 826-8904P
- 製造零件編號:
- IRF7380TRPBF
- 製造商:
- Infineon
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF
This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.
Features & Benefits
• Industry-standard SO-8 package ensures compatibility across different vendors
• Low Rds(on) of 73mΩ optimises efficiency in power applications
• Enhancement mode operation enhances performance characteristics
• Low gate charge of 15nC facilitates quicker switching speeds
• Maximum drain-source voltage of 80V accommodates high power needs
• RoHS compliant and halogen-free promotes environmental safety
• Low Rds(on) of 73mΩ optimises efficiency in power applications
• Enhancement mode operation enhances performance characteristics
• Low gate charge of 15nC facilitates quicker switching speeds
• Maximum drain-source voltage of 80V accommodates high power needs
• RoHS compliant and halogen-free promotes environmental safety
Applications
• Used in high frequency DC-DC converters for power regulation
• Effective in battery management systems that require low power loss
• Suitable for motor controllers needing efficient switching performance
• Employed in power supply units to improve overall efficiency
• Appropriate for driving inductive loads like relays and solenoids
• Effective in battery management systems that require low power loss
• Suitable for motor controllers needing efficient switching performance
• Employed in power supply units to improve overall efficiency
• Appropriate for driving inductive loads like relays and solenoids
What are the implications of the maximum continuous drain current?
The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.
How does the low Rds(on) affect performance?
The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.
What is the significance of its temperature ratings?
Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.
Can this component be directly mounted on PCBs?
Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in compact designs.
How does the gate threshold voltage influence its operation?
With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage | 80 V |
| Series | HEXFET |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 73 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 4mm |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |