IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon

  • RS庫存編號 826-9092
  • 製造零件編號 IPB120P04P4L03ATMA1
  • 製造商 Infineon
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Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type P
Maximum Continuous Drain Current 120 A
Maximum Drain Source Voltage 40 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 5.2 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 136 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Width 9.25mm
Height 4.4mm
Series OptiMOS P
Maximum Operating Temperature +175 °C
Length 10mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 180 nC @ 10 V
1870 現貨庫存,可於3工作日發貨。
單價 /個 (每包:10個)
HK$ 20.46
(不含稅)
單位
Per unit
Per Pack*
10 - 10
HK$20.46
HK$204.60
20 - 40
HK$20.051
HK$200.51
50 - 90
HK$19.65
HK$196.50
100 - 190
HK$16.023
HK$160.23
200 +
HK$15.703
HK$157.03
* 參考價格
包裝方式: