N-Channel MOSFET, 1.2 A, 100 V, 3-Pin SOT-223 Infineon BSP296NH6327XTSA1
- RS庫存編號:
- 826-9260
- 製造零件編號:
- BSP296NH6327XTSA1
- 製造商:
- Infineon
150 現貨庫存，可於3工作日發貨。
單價 个（每托盘 50 ）
HK$5.792
| 單位 | Per unit | Per Pack* |
| 50 - 200 | HK$5.792 | HK$289.60 |
| 250 - 450 | HK$5.647 | HK$282.35 |
| 500 + | HK$5.56 | HK$278.00 |
| * 參考價格 | ||
- RS庫存編號:
- 826-9260
- 製造零件編號:
- BSP296NH6327XTSA1
- 製造商:
- Infineon
法例與合規
產品詳細資訊
Infineon OptiMOS™ Small Signal MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-223 |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.8V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 6.5mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V |
| Width | 3.5mm |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |