N-Channel MOSFET, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BSS316NH6327XTSA1
- RS庫存編號:
- 826-9412
- 製造零件編號:
- BSS316NH6327XTSA1
- 製造商:
- Infineon
750 現貨庫存，可於3工作日發貨。
已增加
單價 个（每带 250 ）
HK$1.06
| 單位 | Per unit | Per Reel* |
| 250 - 500 | HK$1.06 | HK$265.00 |
| 750 - 1250 | HK$1.033 | HK$258.25 |
| 1500 + | HK$1.017 | HK$254.25 |
| * 參考價格 | ||
- RS庫存編號:
- 826-9412
- 製造零件編號:
- BSS316NH6327XTSA1
- 製造商:
- Infineon
法例與合規
產品詳細資訊
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Series | OptiMOS 2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 1.3mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 0.6 nC @ 5 V |
| Length | 2.9mm |
| Transistor Material | Si |
| Height | 0.9mm |
| Minimum Operating Temperature | -55 °C |