P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK Infineon IRFR9024NTRPBF

RS庫存編號:: 827-4088P
製造零件編號:: IRFR9024NTRPBF
製造商:: Infineon

P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK Infineon IRFR9024NTRPBF

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Price 个 (以每卷裝提供)**. 連續帶的數量低於 150

HK$4.685

11480 現貨庫存，可於3工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

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單位	每單位
500 - 980	HK$4.57
1000 +	HK$4.495

** 參考價格

RS庫存編號:: 827-4088P
製造零件編號:: IRFR9024NTRPBF
製造商:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF

This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits

• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications

• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?

It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?

The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?

It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?

Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

How does this MOSFET perform under varying temperatures?

It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	175 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	19 nC @ 10 V
Width	6.22mm
Length	6.73mm
Height	2.39mm
Forward Diode Voltage	1.6V
Minimum Operating Temperature	-55 °C