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MOSFETs
N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S
RS庫存編號:
827-6113P
製造零件編號:
TK12E60W,S1VX(S
製造商:
Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
此產品已停售
RS庫存編號:
827-6113P
製造零件編號:
TK12E60W,S1VX(S
製造商:
Toshiba
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
TK12E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
CN
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
4.45mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Length
10.16mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
15.1mm