N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 Toshiba TK20E60W,S1VX(S
- RS庫存編號:
- 827-6160
- 製造零件編號:
- TK20E60W,S1VX(S
- 製造商:
- Toshiba
當前暫無庫存，可於2024/10/21發貨，3 工作日送達。
已增加
單價 个（每托盘 5 ）
HK$33.802
| 單位 | Per unit | Per Pack* |
| 5 - 20 | HK$33.802 | HK$169.01 |
| 25 - 45 | HK$32.956 | HK$164.78 |
| 50 - 95 | HK$32.13 | HK$160.65 |
| 100 - 245 | HK$31.326 | HK$156.63 |
| 250 + | HK$30.542 | HK$152.71 |
| * 參考價格 | ||
- RS庫存編號:
- 827-6160
- 製造零件編號:
- TK20E60W,S1VX(S
- 製造商:
- Toshiba
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
MOSFET N-Channel, TK2x Series, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 600 V |
| Series | TK |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 155 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 165 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.45mm |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.16mm |
| Height | 15.1mm |