N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

RS庫存編號:: 827-6182P
製造零件編號:: TK31E60W,S1VX(S
製造商:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

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12 現貨庫存，可於3工作日發貨。

單價个 (以每袋裝提供)

HK$72.30

單位	每單位
5 - 9	HK$72.30
10 - 24	HK$70.50
25 - 49	HK$68.70
50 +	HK$67.00

RS庫存編號:: 827-6182P
製造零件編號:: TK31E60W,S1VX(S
製造商:: Toshiba

TK31E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	86 nC @ 10 V
Length	10.16mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	4.45mm
Number of Elements per Chip	1
Height	15.1mm

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

MOSFET N-Channel, TK3x Series, Toshiba