N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1
- RS庫存編號:
- 892-2125P
- 製造零件編號:
- IPA086N10N3GXKSA1
- 製造商:
- Infineon
可享批量折扣
Price 个 (以每管裝提供)**
HK$11.32
1790 現貨庫存，可於3工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 |
|---|---|
| 15 - 20 | HK$11.04 |
| 25 + | HK$10.88 |
** 參考價格
- RS庫存編號:
- 892-2125P
- 製造零件編號:
- IPA086N10N3GXKSA1
- 製造商:
- Infineon
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1
This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.
Features & Benefits
• N-channel configuration optimises current management
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use
Applications
• Ideal for high-frequency switching in electronic devices
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance
What is the significance of the low on-resistance feature in this device?
The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.
Can this MOSFET be used in automotive applications?
Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.
How does the gate threshold voltage influence circuit function?
The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.
What types of circuits are most compatible with this power transistor?
This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.
How should the MOSFET be mounted for optimal performance?
The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS™ 3 |
| Package Type | TO-220 FP |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 37.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.85mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Length | 10.65mm |
| Forward Diode Voltage | 1.2V |
| Height | 16.15mm |
| Minimum Operating Temperature | -55 °C |