N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 Infineon IPP086N10N3GXKSA1
- RS庫存編號:
- 892-2157
- 製造零件編號:
- IPP086N10N3GXKSA1
- 製造商:
- Infineon
此產品已停售
- RS庫存編號:
- 892-2157
- 製造零件編號:
- IPP086N10N3GXKSA1
- 製造商:
- Infineon
法例與合規
產品詳細資訊
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.57mm |
| Maximum Operating Temperature | +175 °C |
| Length | 10.36mm |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Series | OptiMOS 3 |
| Minimum Operating Temperature | -55 °C |
| Height | 15.95mm |
| Forward Diode Voltage | 1.2V |