- RS庫存編號:
- 903-4074
- 製造零件編號:
- 2N7000-D26Z
- 製造商:
- onsemi
當前暫無庫存,可於2024/5/7發貨,3 工作日送達。
已增加
單價 个(每托盘 100 )
HK$1.684
單位 | Per unit | Per Pack* |
100 - 400 | HK$1.684 | HK$168.40 |
500 - 900 | HK$1.634 | HK$163.40 |
1000 + | HK$1.585 | HK$158.50 |
* 參考價格 |
- RS庫存編號:
- 903-4074
- 製造零件編號:
- 2N7000-D26Z
- 製造商:
- onsemi
法例與合規
產品詳細資訊
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 200 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-92 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 9 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.8V |
Maximum Power Dissipation | 400 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -40 V, +40 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 5.2mm |
Width | 4.19mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 5.33mm |