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MOSFETs
N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC Vishay SiHG70N60EF-GE3
RS庫存編號:
903-4475P
製造零件編號:
SiHG70N60EF-GE3
製造商:
Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
可供預購。
Add to Basket
單位
延期交貨
添加到收藏夾
單價 个 (以每管裝提供)
HK$93.65
單位
每單位
13 - 24
HK$93.65
25 +
HK$92.20
包裝方式:
標準包裝
行業包裝
RS庫存編號:
903-4475P
製造零件編號:
SiHG70N60EF-GE3
製造商:
Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
SiHG70N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
CN
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
253 nC @ 10 V
Number of Elements per Chip
1
Height
20.82mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C