N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS庫存編號:: 903-4504P
製造零件編號:: SiHB28N60EF-GE3
製造商:: Vishay

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

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單價个 (以每管裝提供)

HK$45.095

642 現貨庫存，可於3工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

訂單金額滿 HK$850.00 即可享受免費送貨服務

單位	每單位
250 - 498	HK$43.975
500 +	HK$43.295

RS庫存編號:: 903-4504P
製造零件編號:: SiHB28N60EF-GE3
製造商:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	EF Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	9.65mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	10.67mm
Typical Gate Charge @ Vgs	80 nC @ 10 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	4.83mm

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

訂單金額滿 HK$850.00 即可享受 免費 送貨服務

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

訂單金額滿 HK$850.00 即可享受免費送貨服務