SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

  • RS庫存編號 915-8820P
  • 製造零件編號 C2M0280120D
  • 製造商 Wolfspeed
COO (Country of Origin): CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Attribute Value
Channel Type N
Maximum Continuous Drain Current 10 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 370 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 62.5 W
Transistor Configuration Single
Maximum Gate Source Voltage +25 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 20.4 nC @ 20 V
Length 16.13mm
Width 21.1mm
Minimum Operating Temperature -55 °C
Transistor Material SiC
Maximum Operating Temperature +150 °C
Forward Diode Voltage 3.3V
Height 5.21mm
1610 現貨庫存,可於3工作日發貨。
單價 個 (以每管裝提供)
HK$ 55.195
Per unit
10 - 28
30 - 58
60 - 118
120 +