Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS庫存編號:: 919-4189
製造零件編號:: SI9945BDY-T1-GE3
製造商:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

可供預購。

單價个（每带 2500 ）

HK$3.50

單位	每單位	每卷*
2500 - 2500	HK$3.50	HK$8,750.00
5000 - 7500	HK$3.43	HK$8,575.00
10000 +	HK$3.361	HK$8,402.50

* 參考價格

RS庫存編號:: 919-4189
製造零件編號:: SI9945BDY-T1-GE3
製造商:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	4mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	13 nC @ 10 V
Length	5mm
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor