P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF
- RS庫存編號:
- 919-4713
- 製造零件編號:
- IRLML6401TRPBF
- 製造商:
- Infineon
可享批量折扣
Price 个（每带 3000 ）**
HK$0.805
255000 現貨庫存，可於3工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 | 每卷** |
|---|---|---|
| 3000 - 12000 | HK$0.805 | HK$2,415.00 |
| 15000 + | HK$0.724 | HK$2,172.00 |
** 參考價格
- RS庫存編號:
- 919-4713
- 製造零件編號:
- IRLML6401TRPBF
- 製造商:
- Infineon
- COO (Country of Origin):
- PH
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF
This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.
Features & Benefits
• Advanced processing for very low on-resistance
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs
Applications
• Battery and load management systems
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design
What is the impact of higher temperatures on performance?
Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.
How does the gate threshold voltage affect operation?
The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.
Is this product suited for fast-switching applications?
Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.
What precautions should be taken during installation?
It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.
Can this device be used for high-power applications?
The device can continuously manage 4.3A
however, evaluating the specific application's power requirements and thermal management is essential for optimal performance.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Voltage | 12 V |
| Series | HEXFET |
| Package Type | Micro |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 50 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.95V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Length | 3.04mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 10 nC @ 5 V |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |