N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250NPBF

RS庫存編號:: 919-4810
製造零件編號:: IRFP250NPBF
製造商:: Infineon

N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250NPBF

25 現貨庫存，可於3工作日發貨。

單價毎管：25 个

HK$18.868

單位	Per unit	Per Tube*
25 - 25	HK$18.868	HK$471.70
50 - 75	HK$18.458	HK$461.45
100 +	HK$18.048	HK$451.20
* 參考價格

RS庫存編號:: 919-4810
製造零件編號:: IRFP250NPBF
製造商:: Infineon

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: MX

產品詳細資訊

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	200 V
Package Type	TO-247AC
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	214 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Width	5.3mm
Number of Elements per Chip	1
Transistor Material	Si
Length	15.9mm
Typical Gate Charge @ Vgs	123 nC @ 10 V
Height	20.3mm
Minimum Operating Temperature	-55 °C