Dual N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V, 8-Pin SOIC Infineon IRF7343PBF
- RS庫存編號:
- 919-4933
- 製造零件編號:
- IRF7343PBF
- 製造商:
- Infineon
此產品已停售
- RS庫存編號:
- 919-4933
- 製造零件編號:
- IRF7343PBF
- 製造商:
- Infineon
- COO (Country of Origin):
- TH
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 3.4 A, 4.7 A |
Maximum Drain Source Voltage | 55 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 50 mΩ, 105 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 24 nC @ 10 V, 26 nC @ 10 V |
Width | 4mm |
Length | 5mm |
Height | 1.5mm |
Series | HEXFET |
Minimum Operating Temperature | -55 °C |