IRF7343PBF Dual N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V HEXFET, 8-Pin SOIC Infineon

  • RS庫存編號 919-4933
  • 製造零件編號 IRF7343PBF
  • 製造商 Infineon
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COO (Country of Origin): TH
產品詳細資訊

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type N, P
Maximum Continuous Drain Current 3.4 A, 4.7 A
Maximum Drain Source Voltage 55 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 50 mΩ, 105 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Width 4mm
Length 5mm
Transistor Material Si
Typical Gate Charge @ Vgs 24 nC @ 10 V, 26 nC @ 10 V
Height 1.5mm
Series HEXFET
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
暫時缺貨-將在補貨後發貨。
單價 毎管:95 個
HK$ 6.164
(不含稅)
單位
Per unit
Per Tube*
95 - 95
HK$6.164
HK$585.58
190 - 285
HK$5.678
HK$539.41
380 - 855
HK$5.50
HK$522.50
950 - 1805
HK$5.409
HK$513.855
1900 +
HK$5.316
HK$505.02
* 參考價格