Dual N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V, 8-Pin SOIC Infineon IRF7343PBF
- RS庫存編號:
- 919-4933
- 製造零件編號:
- IRF7343PBF
- 製造商:
- Infineon
此產品已停售
- RS庫存編號:
- 919-4933
- 製造零件編號:
- IRF7343PBF
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- TH
產品詳細資訊
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 3.4 A, 4.7 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 50 mΩ, 105 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V, 26 nC @ 10 V |
| Width | 4mm |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Transistor Material | Si |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |