- RS庫存編號:
- 920-0987
- 製造零件編號:
- IXFB210N30P3
- 製造商:
- IXYS
50 現貨庫存,可於3工作日發貨。
已增加
單價 毎管:25 个
HK$207.832
單位 | Per unit | Per Tube* |
25 - 100 | HK$207.832 | HK$5,195.80 |
125 + | HK$187.049 | HK$4,676.225 |
* 參考價格 |
- RS庫存編號:
- 920-0987
- 製造零件編號:
- IXFB210N30P3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 210 A |
Maximum Drain Source Voltage | 300 V |
Series | HiperFET, Polar3 |
Package Type | PLUS264 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 14.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.89 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Width | 5.31mm |
Typical Gate Charge @ Vgs | 268 nC @ 10 V |
Length | 20.29mm |
Minimum Operating Temperature | -55 °C |
Height | 26.59mm |