Fairchild ISL9V5045S3ST_F085 IGBT, 51 A 505 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS庫存編號:
- 862-9369
- 製造零件編號:
- ISL9V5045S3ST_F085
- 製造商:
- Fairchild Semiconductor
此產品已停售
- RS庫存編號:
- 862-9369
- 製造零件編號:
- ISL9V5045S3ST_F085
- 製造商:
- Fairchild Semiconductor
法例與合規
產品詳細資訊
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Features
• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
RS Product Codes
864-8802 FGB3040CS 400V 20A D2PAK
864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK
Note
Quoted current ratings apply when junction temperature Tc = +110°C.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 51 A |
| Maximum Collector Emitter Voltage | 505 V |
| Maximum Gate Emitter Voltage | ±14V |
| Maximum Power Dissipation | 300 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 9.65 x 4.83mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |