Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C Max Junction Temperature 175 °C Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications PFC Industrial Power Solar EV Charger UPS Welding
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