The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
Very high speed: 45 ns Voltage range: 4.5 V to 5.5 V Pin compatible with CY62148B Ultra low standby power Typical standby current: 1 μA Maximum standby current: 7 μA (Industrial) Ultra low active power Typical active current: 2.0 mA at f = 1 MHz Easy memory expansion with CE, and OE features Automatic power-down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
