Infineon 1 MB SPI FRAM 8-Pin SOIC, FM25VN10-G
- RS庫存編號:
- 124-2991
- 製造零件編號:
- FM25VN10-G
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
HK$120.20
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單位 | 每單位 |
|---|---|
| 1 - 24 | HK$120.20 |
| 25 - 48 | HK$118.30 |
| 49 + | HK$115.80 |
* 參考價格
- RS庫存編號:
- 124-2991
- 製造零件編號:
- FM25VN10-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 1MB | |
| Organisation | 128K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 18ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 40MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 3.98 mm | |
| Length | 4.97mm | |
| Standards/Approvals | No | |
| Height | 1.47mm | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 128k | |
| Minimum Supply Voltage | 2V | |
| Maximum Supply Voltage | 3.6V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type FRAM | ||
Memory Size 1MB | ||
Organisation 128K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 18ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 40MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 3.98 mm | ||
Length 4.97mm | ||
Standards/Approvals No | ||
Height 1.47mm | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Number of Words 128k | ||
Minimum Supply Voltage 2V | ||
Maximum Supply Voltage 3.6V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
相关链接
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