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選取全部	屬性	值
	品牌	Infineon
	Product Type	FRAM
	Memory Size	4kB
	Organisation	512 x 8 bit
	Interface Type	Serial-I2C (2 Wire)
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Height	1.48mm
	Width	3.98mm
	Length	4.97mm
	Maximum Operating Temperature	85°C
	Automotive Standard	AEC-Q100
	Minimum Operating Temperature	-40°C
	Number of Bits per Word	8
	Number of Words	512

	選取全部
	品牌 Infineon
	Product Type FRAM
	Memory Size 4kB
	Organisation 512 x 8 bit
	Interface Type Serial-I2C (2 Wire)
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Height 1.48mm
	Width 3.98mm
	Length 4.97mm
	Maximum Operating Temperature 85°C
	Automotive Standard AEC-Q100
	Minimum Operating Temperature -40°C
	Number of Bits per Word 8
	Number of Words 512

Datasheet FM24C04B-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 4 kB Serial-I2C (2 Wire) FRAM 8-Pin SOIC, FM24C04B-G

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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